Samsung has come up with the world’s first 1 TB eUFS for smartphones and is expected to be fitted on top-end model of the upcoming Galaxy S10.

Samsung announced it has begun mass production of the world’s first 1TB embedded Universal Flash Storage or eUFS 2.1 for fitment in future mobile devices. This makes for a two-fold jump in a capacity as the company so far maxed out at producing 512 GB of embedded storage solution and enabled the company to offer a Note 9 model with 512 GB of internal storage.

And now, with 1 TB of flash storage available for smartphone, rumor world is rife with speculation the upcoming Galaxy S10 will have a 1 TB top-end model. Also, it isn’t just about twice the storage capacity for the latest memory chip. Rather, the new 1 TB eUFS 2.1 is about a quantum jump in storage technology as well.

That includes sequential read speeds of up to 1,000 megabytes per second which, the company claimed is about twice the sequential read speed of a standard 2.5-inch SATA solid state drive. Similarly, the random read speed has gone for a 38 percent improvement to 58,000 IOPS.

In real-world terms, the above translates to offloading of 5 GB full HD videos to an NVMe SSD in just about 5 seconds. In the same manner, the high random write speeds will ensure users will be able to sustain high-speed shooting at even 960 frames per second with perfect ease. This again makes it perfect for use on a future smartphone where multiple cameras have become more the norm than an exception.

Samsung also stated the new 1 TB chip has the same dimensions as current 512 GB storage chips but doubles the storage capacity by using 16 stacked layers of 512-gigabit V-NAND flash memory along with a new proprietary controller. As a further demonstration of the capabilities of the new 1 TB eUFS, Samsung said users will be able to store as many as 260 videos shot in 4K with each of 10 mins duration.

See Also: Samsung Galaxy M10, M20 launched, priced at Rs. 7990 and 10,990.

The South Korean giant also stated they are in the process of expanding manufacturing capacity of 512 GB eUFS at its Pyeongtaek plant in the country in view of strong anticipated demand for the chip during the first half of 2019.

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